III-V-Solarzelle auf der Grundlage von abgeplatztem Germanium-Substrat erreicht 23,36 % Wirkungsgrad

III-V-Solarzelle auf der Grundlage von abgeplatztem Germanium-Substrat erreicht 23,36 % Wirkungsgrad

Die US-Wissenschaftler verwendeten statt Galliumarsenid abgeplatztes Germanium, da ersteres Berichten zufolge mehrere mit dem Abplatzen von GaAs verbundene Probleme reduziert. Die Zelle erreichte eine Leerlaufspannung von 1,019 V, eine Kurzschlussstromdichte von 28,49 mA cm-2 und einen Füllfaktor von 80,45 %.

Radical reduction of III–V device costs requires a multifaceted approach attacking both growth and substrate costs. Implementing device removal and substrate reuse provides an opportunity for substrate cost reduction. Controlled spalling allows removal of thin devices from the expensive substrate; however, the fracture-based process currently generates surfaces with significant morphological changes compared to polished wafers. 49 single junction devices are fabricated across the spalled surface of full 50 mm germanium wafers without chemo-mechanical polishing before epitaxial growth. Device defects are identified and related to morphological spalling defects—arrest lines, gull wings, and river lines—and their impact on cell performance using physical and functional characterization techniques. River line defects have the most consistent and detrimental effect on cell performance. Devices achieve a single junction efficiency above 23% and open-circuit voltage of 1.01 V, demonstrating that spalled germanium does not need to be returned to a pristine, polished state to achieve high-quality device performance.

More Informations here.

(Quelle: Wiley Online Library vom 16. Juni 2022)